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487 pcs
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487 pcs | On Request | 1 | On Request | On Request | 0241P/ | On Request | On Request |
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The Samsung Electronics K4E151612D-TC60 is an EDO DRAM memory integrated circuit with a capacity of 16 Megabits and a 4-bit data bus width. This component utilizes EDO DRAM technology, offering improved access and cycle times compared to FPM DRAM.
Packaged in a TSOP48 Thin Small Outline Package, it ensures compatibility with industry-standard footprints. The K4E151612D-TC60 is designed for high-density memory solutions, providing fast page access and high bandwidth for stable data retention.
This memory IC leverages Samsung's advanced semiconductor technology to enhance system performance by reducing read/write delays. It is a cost-effective memory upgrade path and is suitable for use in legacy computer systems and specialized industrial applications requiring EDO DRAM technology.
The K4E151612D-TC60 is an EDO DRAM.
The memory capacity is 16 Megabits.
The data bus width is 4 bits.
It uses a TSOP48 package.