| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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127 pcs
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127 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The K4D553235F-VC33 from Samsung Electronics is a high-performance Dynamic RAM with a density of 268,435,456 bits. Fabricated with advanced CMOS technology, this component offers a data rate of up to 3.6GB/s per chip, making it suitable for demanding memory system applications.
This Dynamic RAM features a 1.8V power supply for both the device and I/O interface, with SSTL_18 compatible inputs and outputs. It supports 4 banks of operation and offers programmable options for read latency (4, 5, or 6 clock cycles), burst length (2, 4, or 8), and burst type (sequential or interleave).
All inputs, except for data and DM, are sampled at the positive-going edge of the system clock. The component utilizes a differential clock input. The K4D553235F-VC33 is supplied in a BGA48 package, designed for surface mounting.
Absolute maximum ratings include a voltage range of -0.5V to 3.6V on pins and VDD supplies, a storage temperature range of -55°C to +150°C, and a power dissipation of 3.3W.
The operating voltage for device operation and I/O interface is 1.8V ± 0.1V.
The K4D553235F-VC33 is supplied in a BGA48 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is Unaffected.