| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,950 pcs
|
8950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Data Rate | |
| Density | |
| Memory Type | |
| Operating Temperature | |
| Operating Voltage | |
| SVHC Present |
This Samsung Electronics K4B4G164E-BYMA is a DDR3L SDRAM component designed for memory applications. It features a low operating voltage of 1.35V and a high data rate of 1866MBPS, making it suitable for performance-sensitive systems.
The component has a density of 4Gb and a bit organization of x16, with 8 internal banks. It belongs to the 3rd generation of DDR memory technology. The operating temperature range is from 0°C to +85°C.
This part is classified under the Memory category, specifically as DDR3L SDRAM. Its specifications are derived from manufacturer data, providing engineers with key electrical and performance characteristics for design considerations.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1.35V
0°C to +85°C
4Gb
1866MBPS
x16
8 Banks
3rd Generation