| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,232 pcs
|
7232 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Samsung Electronics K4B4G1646E-BYMA000 is a high-performance DDR3L Synchronous Dynamic Random-Access Memory (SDRAM) module. This component offers a substantial 4 Gbit density, making it suitable for applications requiring significant data storage and rapid access.
Key electrical characteristics include a clock speed of 933MHz and operating voltage ranges of 1.28V to 1.45V or 1.28V to 1.575V. The memory is packaged in an FBGA-96 (Fine-Pitch Ball Grid Array) format, with specific dimensions noted as 7.5x13.3mm for some variants. This packaging is designed for surface mounting.
Environmental compliance for this part includes RoHS3 compliance and an MSL 1 rating, indicating unlimited shelf life under standard conditions. The REACH status is noted as unaffected. This memory component is designed for use in various electronic systems where high-speed data handling is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4B4G1646E-BYMA000 is a DDR3L SDRAM.
The density of this memory component is 4 Gbit.
The clock speed is 933 MHz.
The operating voltage range is 1.28V to 1.45V or 1.28V to 1.575V.
It is supplied in an FBGA-96 package, sometimes specified as FBGA-96(7.5x13.3).
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is MSL 1.