| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,100 pcs
|
22100 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
9,040 pcs
|
9040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Memory Size | |
| Mounting Type | |
| Operating Voltage |
This Samsung Electronics K4B4G1646D-BYK0 is a DRAM Chip utilizing DDR3 SDRAM technology. It features a substantial 4Gbit memory capacity, organized as 256Mx16.
The component operates within a voltage range of 1.35V to 1.5V. It is housed in a 96-Pin FBGA package, designed for surface mounting.
This part falls under the Memory category, specifically within DRAM Chips. Its specifications make it suitable for various memory-intensive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4B4G1646D-BYK0 is a DDR3 SDRAM chip.
The memory size is 4 Gbit.
The organization is 256Mx16.
The operating voltage options are 1.35V and 1.5V.
It uses a 96-Pin FBGA package.