| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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345 pcs
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345 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The Samsung Electronics K4B4G1646B-HCMA is a 4Gb B-die DDR3 SDRAM designed for high-speed data transfer applications. This synchronous device achieves data rates of up to 2133Mb/sec/pin, making it suitable for general applications requiring fast memory access.
The K4B4G1646B-HCMA is organized as a 32Mbit x 16 I/Os x 8banks configuration. Key features include bi-directional differential data-strobe, internal self-calibration via the ZQ pin, asynchronous reset, and programmable CAS latency. The component is housed in a BGA package.
This DDR3 SDRAM is designed for integration into various electronic systems where high performance and reliable memory operation are critical. Its specifications support efficient data handling and processing in demanding environments.
The K4B4G1646B-HCMA is a 4Gb B-die DDR3 SDRAM.
The K4B4G1646B-HCMA achieves data rates of up to 2133Mb/sec/pin.
This device is organized as a 32Mbit x 16 I/Os x 8banks.
The K4B4G1646B-HCMA uses a BGA package.
Yes, it features internal self-calibration through the ZQ pin.