| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,053 pcs
|
12053 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,875 pcs
|
6875 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,875 pcs
|
6875 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Samsung Electronics K4B4G0846Q-HYKO is a high-performance DDR3 SDRAM memory integrated circuit. Designed for demanding applications, it offers a data rate of 1600 MT/s and operates at a low voltage of 1.5V, contributing to energy efficiency.
This memory IC supports multiple memory banks and includes Error Correction Code (ECC) functionality for enhanced data integrity. Its technology is based on CMOS, ensuring reliable performance. The component is housed in a BGA (Ball Grid Array) package, which is suitable for space-constrained designs and meets standard BGA packaging dimensions.
With a speed grade of PC3-12800 and a configuration of 512M x 8, the K4B4G0846Q-HYKO is optimized for high-speed computing applications. It operates within a temperature range of 0°C to 85°C, offering robustness against environmental factors. This component is widely used in personal computers, servers, networking equipment, and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4B4G0846Q-HYKO is a DDR3 SDRAM memory IC.
The data rate is 1600 MT/s.
The operating voltage is 1.5V.
The operating temperature range is from 0°C to 85°C.
It uses a BGA package.