| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,900 pcs
|
1900 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
1,640 pcs
|
1640 pcs | On Request | 1 | On Request | On Request | 17+20+22+ | On Request | On Request | |
|
1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
144 pcs
|
144 pcs | On Request | 1 | On Request | On Request | 1743+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The K4B4G0846E-BYMA from Samsung Electronics is a high-performance DDR3L SDRAM memory module. It offers a substantial chip density of 4 Gbit, organized as 512Mx8, making it suitable for various memory-intensive applications.
This memory component operates with a maximum clock rate of 1866 MHz and a maximum access time of 0.195 ns, ensuring rapid data retrieval. The operating voltage ranges from a minimum of 1.283 V to a maximum of 1.575 V, with an operating current of 64 mA.
Packaged in an FBGA-78 form factor, the K4B4G0846E-BYMA is designed for surface mounting. It operates within a temperature range of 0°C to 95°C, classified under the commercial temperature grade. The part status is active, indicating its current availability for new designs.
The operating voltage range is 1.283V to 1.45V.
The package type is FBGA-78.
The operating temperature range is 0°C to 95°C.
The memory density is 4 Gbit, organized as 512Mx8.
The maximum clock rate is 1866 MHz.
The data bus width is 8 bits.