| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
210 pcs
|
210 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Density | |
| SVHC Present | |
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| Voltage |
This Samsung K4B4G0846E-BMK0 is a high-performance 4Gb DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module. It features a 512M x 8 organization, providing efficient data handling for various applications.
The component operates at a speed of 1600Mbps and utilizes a low voltage of 1.35V, contributing to power efficiency. The operating temperature range is from -40°C to 95°C, making it suitable for demanding environments. It is packaged in a 78 FBGA format and is currently in mass production.
This DDR3 SDRAM is designed for applications requiring high memory bandwidth and capacity. Its specifications make it a suitable choice for computing, networking, and embedded systems where reliable and fast memory performance is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The density is 4 Gb.
The operating voltage is 1.35 V.
The operating temperature range is -40 to 95 °C.
The package type is 78 FBGA.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.
The REACH status is REACH Unaffected.