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K4B2G1646F-BCNB The Samsung Electronics K4B2G1646F-BCNB is a 2Gb DDR3 SDRAM chip. It is organized as 128Mx16 and operates at a 1.5V supply.
Mfr Part #:

K4B2G1646F-BCNB

Available from 3 distributors
Mfr Name: Samsung Electronics
Samsung Electronics
The Samsung Electronics K4B2G1646F-BCNB is a 2Gb DDR3 SDRAM chip. It is organized as 128Mx16 and operates at a 1.5V supply.
✓ Total Stock: 15,078 pcs
$ Price Range: $14.74

K4B2G1646F-BCNB Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
6,761 pcs
On Request
6761 pcs On Request 1 On Request On Request 22＋ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
6,761 pcs
On Request
6761 pcs On Request 1 On Request On Request 22＋ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,556 pcs
On Request
1556 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

K4B2G1646F-BCNB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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K4B2G1646F-BCNB Description

Short technical summary and product information.

The Samsung Electronics K4B2G1646F-BCNB is a 2-gigabit (2Gb) Double Data Rate 3 (DDR3) Synchronous DRAM. Manufactured by Samsung Semiconductor, it belongs to the DDR3 F-die generation.

 

This memory IC is organized as 128M words by 16 bits (128M x 16), providing a total storage capacity of 256 megabytes. It operates with a supply voltage of 1.5V.

 

The K4B2G1646F-BCNB is supplied in a 96-pin FBGA package, suitable for surface mounting.

 

This component is classified as a DRAM chip within the broader category of Memory ICs.

K4B2G1646F-BCNB Quick Information

Product Type: DRAM Chip
Series: F-die generation
Canonical Name: Samsung Electronics K4B2G1646F-BCNB DDR3 SDRAM
Subcategory: DRAM Chip

K4B2G1646F-BCNB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

K4B2G1646F-BCNB Estimated Pricing

Qty Low High
1+ $14.74 $14.74

Estimated market price range - modelled values for guidance only, not live distributor offers.

K4B2G1646F-BCNB Features

  • High-speed DDR3 SDRAM technology
  • 256 MB storage capacity
  • Operates at 1.5 V
  • 96-pin FBGA package
  • 128M x 16 organization

K4B2G1646F-BCNB Applications

  • Used in computing memory modules
  • Suitable for embedded systems
  • Ideal for high-speed data processing
  • Compatible with standard DDR3 slots

K4B2G1646F-BCNB FAQs

6 frequently asked questions generated from this part’s specifications.
What type of DRAM is the K4B2G1646F-BCNB?

The K4B2G1646F-BCNB is a DDR3 SDRAM chip.

What is the memory density of the K4B2G1646F-BCNB?

The memory density is 2 Gbit.

What is the organization of the K4B2G1646F-BCNB memory chip?

The organization is 128M words by 16 bits.

What is the total storage capacity of the K4B2G1646F-BCNB?

The total storage capacity is 256 megabytes.

What is the supply voltage for the K4B2G1646F-BCNB?

The supply voltage is 1.5 V.

What package type is the K4B2G1646F-BCNB supplied in?

It is supplied in a 96-pin FBGA package.

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