AS4C64M16D3W-12BCN
Alliance
The Alliance AS4C64M16D3W-12BCN is a 1Gb DDR3 DRAM with a 64M x 16 organization. It operates at 1.5V and features an 800MHz clock speed.
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396 pcs
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396 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Samsung Electronics K4B2G1646F is a 2-gigabit (2Gb) Double Data Rate 3 (DDR3) Synchronous DRAM, belonging to the DDR3 F-die generation. This memory IC is manufactured by Samsung Semiconductor and is organized as 128M words by 16 bits (128M x 16), providing a total storage capacity of 256 megabytes.
Key technical specifications include a DRAM type of DDR3 SDRAM with a chip density of 2Gbit. It operates at a voltage of 1.5V. The component is housed in a 96-pin FBGA package.
This memory IC is suitable for various electronic applications requiring high-speed data storage and retrieval. Its DDR3 technology offers enhanced performance compared to previous generations.
| Qty | Low | High |
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| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is DDR3 SDRAM.
2Gbit.
128M×16.
256MB.
1.5V.
FBGA (96-Pin).
96 pins.