H5TQ2G83BFR-H9I
SK Hynix
The SK Hynix H5TQ2G83BFR-H9I is a 2GB DDR DRAM memory integrated circuit. It operates with a 1.5V supply voltage and a maximum clock frequency of 667MHz.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
210 pcs
|
210 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Memory Type |
The Samsung Electronics K4B2G0846E is a DDR DRAM memory integrated circuit. This component is classified under the memory category and is designed for various electronic applications requiring reliable memory solutions.
Key specifications include its designation as DDR DRAM. The component adheres to RoHS3 compliance standards, indicating its suitability for use in electronic equipment manufactured with environmental considerations. It also features a Moisture Sensitivity Level (MSL) of 1, signifying that it has unlimited shelf life when stored under recommended conditions.
Further compliance information indicates REACH Unaffected status. While specific electrical and mechanical details are not provided in the available data, its classification as DDR DRAM suggests its role in data storage and retrieval within electronic systems. The part is manufactured by Samsung Electronics, a recognized leader in semiconductor technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4B2G0846E is a DDR DRAM memory IC.
The K4B2G0846E is RoHS3 Compliant.
The MSL for the K4B2G0846E is 1 Unlimited.
The K4B2G0846E is REACH Unaffected.
