| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,815 pcs
|
27815 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Density | |
| Operating Temperature | |
| Operating Voltage | |
| SVHC Present | |
| Speed |
This Samsung Electronics K4B1G0846I-BYMA is a high-density 1Gb DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) chip. Designed for efficient data storage and retrieval, it features an operating voltage of 1.35V and a high speed of 1600 Mbps, making it suitable for various computing and embedded applications.
The chip is organized as 128M x 8 bits, providing a robust memory solution. It comes in a compact 78FBGA (Fine-Pitch Ball Grid Array) package, which is ideal for space-constrained designs and surface-mount applications. The operating temperature range is from -40°C to 95°C, ensuring reliable performance in diverse environmental conditions.
This component is part of Samsung's extensive memory offerings, known for their quality and performance. Its specifications make it a versatile choice for system upgrades or new product development requiring reliable and fast memory.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1 Gb.
128M x 8.
1600 Mbps.
1.35 V.
-40 to 95 °C.
78FBGA.