| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,520 pcs
|
2520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Samsung K4A8G165WG-BCWE is a vital 8 Gigabit DDR4 SDRAM memory component engineered for demanding computing environments. Manufactured by Samsung Electronics, this chip provides a speed of 3200 Mbps and operates at a standard 1.2V.
Its x16 organization allows for efficient data processing, making it suitable for Artificial Intelligence (AI) workloads, server environments, and 5G communication infrastructure. The memory chip is housed in a compact 96-ball Fine-Pitch Ball Grid Array (FBGA) package, suitable for surface mounting.
With an operating temperature range of 0°C to 85°C, the K4A8G165WG-BCWE offers a combination of density, speed, and power efficiency. This makes it an ideal choice for applications requiring robust memory performance and reliability, including AI accelerators, data centers, enterprise servers, and high-performance embedded systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4A8G165WG-BCWE is a DDR4 SDRAM memory chip.
The density of the K4A8G165WG-BCWE is 8 Gigabits (Gb).
The K4A8G165WG-BCWE operates at a speed of 3200 Mbps.
The operating voltage for the K4A8G165WG-BCWE is 1.2V.
The K4A8G165WG-BCWE is rated for an operating temperature range of 0°C to 85°C.
The K4A8G165WG-BCWE comes in a 96-ball Fine-Pitch Ball Grid Array (FBGA-96) package.