| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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364 pcs
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364 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The K4A4G165WE-BIWE from Samsung Electronics is a high-performance DDR4 memory component designed for demanding applications. It offers a substantial 4 Gb density, organized as 256M x 16 bits, enabling efficient data handling.
This memory operates at a rapid speed of 3200 Mbps with a standard voltage of 1.2 V. The component is built to withstand a wide range of environmental conditions, featuring an operating temperature range of -40 to 95 °C. Its robust 96FBGA package ensures reliable integration into various electronic systems.
This part is currently in mass production, indicating its availability for large-scale projects. The K4A4G165WE-BIWE is suitable for applications requiring significant memory bandwidth and capacity, such as in computing, networking, and high-end consumer electronics.
DDR4
4 Gb
1.2 V
-40 to 95 °C
96FBGA
3200 Mbps
256M x 16