| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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210 pcs
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210 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Samsung K4A4G085WE-BITD is a high-performance DDR4 Synchronous Dynamic Random-Access Memory (SDRAM) module. It features a density of 4 Gigabits (Gb) and an organization of 512M x 8 bits, enabling efficient data handling.
The component operates at a speed of 2666 Mbps and requires a standard voltage of 1.2V, making it suitable for a wide range of computing applications. The operating temperature range is from -40°C to 95°C, ensuring reliability in diverse environmental conditions.
Packaged in a compact 78FBGA (Fine-Pitch Ball Grid Array) format, this memory chip is designed for surface mounting. Its 'Mass Production' status indicates availability for commercial use. The RoHS3 compliance signifies adherence to environmental standards regarding hazardous substances.
This DDR4 SDRAM is ideal for systems requiring fast and efficient memory solutions, such as personal computers, servers, and embedded systems where performance and density are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4A4G085WE-BITD memory operates at 2666 Mbps.
The operating voltage for the K4A4G085WE-BITD is 1.2 V.
The K4A4G085WE-BITD has an operating temperature range of -40 to 95 °C.
The K4A4G085WE-BITD is supplied in a 78FBGA package.
The density of the K4A4G085WE-BITD is 4Gb.
The organization of the K4A4G085WE-BITD memory is 512M x 8.