| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,870 pcs
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2870 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This JS28F640P30BF75A from Micron Technology is a 64Mbit non-volatile Flash NOR memory integrated circuit. It utilizes a parallel interface and operates at a clock frequency of 40 MHz, with an access time of 75 ns. The device supports a supply voltage range of 1.7V to 2V and is designed for surface mounting in a 56-TFSOP package.
Key electrical characteristics include a write cycle time of 75ns. The operating temperature range is specified from -40°C to +85°C. This memory IC is built using 65nm process technology and offers a minimum of 100,000 erase cycles, indicating robust reliability for various applications. The part is organized as 4M x 16 bits.
Additional features include low standby current and synchronous read capabilities. The component is suitable for applications requiring reliable non-volatile data storage with moderate performance requirements. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.67 | $2.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device has a memory size of 64 Mbit and an organization of 4M x 16.
The typical access time is 75 ns.
Core voltage (VCC) ranges from 1.7 V to 2.0 V, and I/O voltage (VCCQ) ranges from 1.7 V to 3.6 V.
The operating temperature range is -40°C to 85°C (TA).
It is available in a 56-TFSOP (0.724", 18.40mm width) surface-mount package.
The device supports a minimum of 100,000 erase cycles per sector.
Typical standby current is 30 µA, with a maximum of 55 µA.