| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron Technology JS28F640P30B85A is a high-performance Parallel NOR Flash Memory device with a density of 64Mbit. It features an initial access time of 85 ns and supports a clock frequency of up to 40 MHz. The memory operates with a core voltage range of 1.7 V to 2.0 V and an I/O voltage range of 1.7 V to 3.6 V.
Designed with Multi-Level Cell Technology for high density at low cost, this device utilizes an asymmetrically-blocked architecture, including four 32-KByte parameter blocks and 128-KByte main blocks. It offers various burst modes for efficient data retrieval. The JS28F640P30B85A is available in a 56-Lead TSOP package, suitable for surface mount applications.
Key features include a 16-bit wide data bus, buffered enhanced factory programming, and security features such as one-time programmable registers and absolute write protection. The operating temperature range is -40°C to +85°C, making it suitable for a variety of environmental conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
64 Mbit.
4M x 16.
85 ns.
52 MHz.
Core voltage: 1.7V to 2.0V; I/O voltage: 1.7V to 3.6V.
-40°C to +85°C.
56-TSOP, 56-TFSOP (0.724", 18.40mm Width), and 56-Lead TSOP.