| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,304 pcs
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2304 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,304 pcs
|
2304 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The JS28F512P33EFA is a 512Mbit NOR Flash memory from Micron Technology. It uses a parallel interface and is organized as 32M x 16 with a 16-bit data bus. The device operates from a 2.3V to 3.6V supply, with an access time of 105 ns and a clock frequency of 40 MHz. It is rated for 100,000 erase cycles per block and is manufactured on a 65nm process.
This flash memory includes buffered enhanced factory programming with a typical throughput of 2 MB/s and 3.0V buffered programming at 1.46 MB/s typical. It also supports program and erase suspend operations with a 25µs typical latency, plus a one-time programmable register with 2112 OTP bits. Standby current is 70µA typical, and continuous synchronous read current is 21mA typical.
The device is offered in a 56-TSOP surface-mount package (56-TFSOP, 0.724 inch width) and operates over an ambient temperature range of -40°C to 85°C. This makes it suitable for embedded code and data storage in industrial and telecommunications equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JS28F512P33EFA is a 512Mbit NOR Flash memory organized as 32M x 16.
The device operates from 2.3V to 3.6V.
The device is supplied in a 56-TSOP surface-mount package (56-TFSOP, 0.724 inch width).
The operating temperature range is -40°C to 85°C ambient.
The initial access time is 105 ns.
The device supports a minimum of 100,000 erase cycles per block.
It supports buffered enhanced factory programming at 2 MB/s typical and 3.0V buffered programming at 1.46 MB/s typical.