Mfr Part #:

JS28F512P33BFD

Mfr Name: MIC

The Micron JS28F512P33BFD is a 512Mbit Parallel NOR Flash memory utilizing 65nm process technology. It offers high performance with various access times and voltage ranges.

✓ Total Stock: 168 pcs

JS28F512P33BFD Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Husky International Electronic ✓ Non-Authorised Inventory information	168 pcs On Request	168 pcs	On Request	1	On Request	On Request	N/A	On Request	On Request

JS28F512P33BFD Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	MIC
Architecture	MLC
Density	512Mbit
Memory Type	NOR Flash
Mounting Type	Surface Mount
Package / Case	64-Ball Easy BGA

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JS28F512P33BFD Description

Short technical summary and product information.

The Micron JS28F512P33BFD is a high-performance Parallel NOR Flash memory with a density of 512Mbit, manufactured using 65nm process technology. It supports a wide core and I/O voltage range of 2.3V to 3.6V.

Key features include fast initial access times, with 95ns for Easy BGA packages and 105ns for TSOP packages. It also supports a 25ns asynchronous page read mode and a 52MHz synchronous burst read mode with zero WAIT states. The device offers buffered enhanced factory programming (BEFP) at 2 MB/s and 3.0V buffered programming at 1.46 MB/s, utilizing a 512-word buffer.

Security features include a one-time programmable register with 2112 OTP bits for customer programming, absolute write protection, power-transition lockout, and password access. The memory architecture is MLC, designed for high density at low cost, with symmetrically and asymmetrically blocked options available.

Available in a 64-ball Easy BGA package, the JS28F512P33BFD is designed for embedded applications requiring reliable and high-speed non-volatile storage. It operates within an industrial temperature range of -40°C to +85°C and boasts a minimum of 100,000 erase cycles per block.

JS28F512P33BFD Quick Information

Product Type: Parallel NOR Flash Memory

Series: P33-65nm

Canonical Name: Micron JS28F512P33BFD Parallel NOR Flash Memory

Subcategory: NOR Flash

JS28F512P33BFD Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

JS28F512P33BFD Features

512Mbit Parallel NOR Flash memory.
65nm MLC process technology.
2.3V to 3.6V core and I/O voltage.
95ns initial access for Easy BGA.
64-ball Easy BGA package.

JS28F512P33BFD Applications

Embedded systems storage.
High-performance data logging.
Firmware storage applications.
Industrial control systems.

JS28F512P33BFD FAQs

6 frequently asked questions generated from this part’s specifications.

What is the density of the Micron JS28F512P33BFD?

The Micron JS28F512P33BFD has a density of 512Mbit.

What are the voltage requirements for the JS28F512P33BFD?

The core voltage (VCC) and I/O voltage (VCCQ) both range from 2.3V to 3.6V.

What is the initial access time for the JS28F512P33BFD in an Easy BGA package?

The initial access time for the 512Mb, 1Gb Easy BGA package is 95ns.

What package type is the JS28F512P33BFD available in?

The JS28F512P33BFD is available in a 64-ball Easy BGA package.

What is the process technology used for the JS28F512P33BFD?

The JS28F512P33BFD uses 65nm process technology.

What is the minimum number of erase cycles per block for this NOR Flash memory?

The minimum number of erase cycles per block is 100,000.