| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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576 pcs
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576 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Micron Technology JS28F512P33BFD is a high-performance Parallel NOR Flash memory with a density of 512Mbit. It utilizes NOR flash technology and offers a 105ns access time, making it suitable for various embedded applications.
This device operates with a core and I/O voltage range of 2.3V to 3.6V. It supports a clock frequency of up to 40 MHz and features a 32M x 16 memory organization. The JS28F512P33BFD is designed for reliability, with a minimum of 100,000 erase cycles per block and an operating temperature range of -40°C to 85°C.
The memory is housed in a 56-TSOP package, designed for surface mounting. It also supports buffered enhanced factory programming (BEFP) at 2 MB/s (TYP) and 3.0V buffered programming at 1.46 MB/s (TYP), facilitating efficient data loading.
Key features include security options such as a one-time programmable register and password access. The 65nm process technology contributes to its performance and density.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JS28F512P33BFD has a memory size of 512Mbit.
The JS28F512P33BFD uses a Parallel memory interface.
The operating voltage range for the JS28F512P33BFD is 2.3V to 3.6V.
The access time for the JS28F512P33BFD is 105 ns.
The operating temperature range for the JS28F512P33BFD is -40°C to 85°C.
The JS28F512P33BFD is available in a 56-TSOP package.