| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron Technology JS28F256P33BFA is a high-performance 256Mbit Parallel NOR Flash Memory designed for embedded applications. It offers a voltage range of 2.3V to 3.6V for both core and I/O, ensuring compatibility with various system designs.
Key electrical characteristics include a 105ns initial access time for TSOP packages and a 40MHz clock frequency. The memory is organized as 16M x 16 bits and utilizes FLASH - NOR technology. It supports a buffered enhanced factory programming speed of 2.0 MByte/s and a 3.0V buffered programming speed of 1.5 MByte/s.
This device is housed in a 56-TSOP package, suitable for surface mount applications. It operates within a temperature range of -40°C to 85°C (TC), making it robust for demanding environments. The memory also features security options such as one-time programmable registers and password access.
With a focus on reliability, the JS28F256P33BFA offers a minimum of 100,000 erase cycles per block. Its architecture is based on Multi-Level Cell Technology, providing high density at a low cost. The device is compatible with Common Flash Interface standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
256 Mbit.
2.3 V to 3.6 V.
-40°C to 85°C.
56-TSOP surface-mount package.
40 MHz.
Minimum 100,000 erase cycles per block.
65 µA.