| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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190 pcs
|
190 pcs | On Request | 1 | On Request | On Request | 0835+ | On Request | On Request | |
|
79 pcs
|
79 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Intel JS28F256P33B95 is a high-performance StrataFlash memory device designed for embedded applications. It employs Multi-Level Cell technology, offering higher density at a lower cost per bit compared to NOR devices. This device supports both code and data storage.
Key electrical characteristics include a core operating voltage range of 1.7V to 2.0V. The device is rated for operation between -40°C and +85°C, with a storage temperature range of -65°C to +125°C. Absolute maximum ratings are provided for various voltages, including VCC, VCCQ, and signal voltages.
The JS28F256P33B95 is available in a 56-lead TSOP package, suitable for surface mount applications. It offers features such as high-performance synchronous-burst read mode, fast asynchronous access times, and low power consumption. The device also includes flexible security options and power-transition erase/program lockout capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.03 | $10.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The core operating voltage (VCC) for the JS28F256P33B95 is between 1.7 V and 2.0 V.
The device operates under bias in a temperature range of -40 °C to 85 °C.
The JS28F256P33B95 is available in a 56-lead TSOP package.
The JS28F256P33B95 utilizes Multi-Level Cell technology.