| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,300 pcs
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11300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,009 pcs
|
2009 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Micron Technology JS28F128M29EWLA is a 128Mbit Parallel NOR Flash Memory IC designed for embedded applications. It operates within a supply voltage range of 2.7V to 3.6V for program, erase, and read functions, with I/O buffers operating from 1.65V to 3.6V.
This memory device offers asynchronous random or page read access times of 70ns (TSOP) and 25ns (page access). It supports a buffer program with a maximum buffer size of 256 words, achieving program times as fast as 0.31µs per byte with VPPH.
The memory organization is 16M x 8 or 8M x 16. Key features include program/erase suspend and resume capabilities, unlock bypass, block erase, chip erase, and write-to-buffer functionality. It is built using 65nm single-bit cell process technology.
The JS28F128M29EWLA is supplied in a 56-TSOP Surface Mount package. It operates within an ambient temperature range of -40°C to 85°C and boasts 100,000 minimum erase cycles per block with 20 years of data retention.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage (VCC) for program, erase, and read operations is 2.7V to 3.6V, and the I/O buffer voltage (VCCQ) is 1.65V to 3.6V.
The random access time is 60ns for BGA packages and 70ns for TSOP packages, while the page access time is 25ns.
The operating ambient temperature range is -40°C to 85°C.
This part is available in a 56-TSOP (Thin Small Outline Package) for surface mounting.
The memory organization is 16M x 8 or 8M x 16.
Each block can withstand a minimum of 100,000 erase cycles.
The typical data retention period is 20 years.