JS28F128M29EWLA The Micron Technology JS28F128M29EWLA is a 128Mbit Parallel NOR Flash Memory IC. It operates with a supply voltage of 2.7V to 3.6V and features a 70ns access time.
Mfr Part #:

JS28F128M29EWLA

Available from 2 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology JS28F128M29EWLA is a 128Mbit Parallel NOR Flash Memory IC. It operates with a supply voltage of 2.7V to 3.6V and features a 70ns access time.
✓ Total Stock: 13,309 pcs
$ Price Range: $1.28

JS28F128M29EWLA Available from 2 distributors

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11,300 pcs
11300 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,009 pcs
2009 pcs On Request 1 On Request On Request 24+ On Request On Request

JS28F128M29EWLA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Halogen Free
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Operating Voltage
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time

JS28F128M29EWLA Description

Short technical summary and product information.

The Micron Technology JS28F128M29EWLA is a 128Mbit Parallel NOR Flash Memory IC designed for embedded applications. It operates within a supply voltage range of 2.7V to 3.6V for program, erase, and read functions, with I/O buffers operating from 1.65V to 3.6V.

 

This memory device offers asynchronous random or page read access times of 70ns (TSOP) and 25ns (page access). It supports a buffer program with a maximum buffer size of 256 words, achieving program times as fast as 0.31µs per byte with VPPH.

 

The memory organization is 16M x 8 or 8M x 16. Key features include program/erase suspend and resume capabilities, unlock bypass, block erase, chip erase, and write-to-buffer functionality. It is built using 65nm single-bit cell process technology.

 

The JS28F128M29EWLA is supplied in a 56-TSOP Surface Mount package. It operates within an ambient temperature range of -40°C to 85°C and boasts 100,000 minimum erase cycles per block with 20 years of data retention.

JS28F128M29EWLA Quick Information

Product Type: Parallel NOR Flash Memory
Canonical Name: Micron Technology JS28F128M29EWLA Parallel NOR Flash Memory
Subcategory: Parallel NOR Flash

JS28F128M29EWLA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JS28F128M29EWLA Estimated Pricing

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1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

JS28F128M29EWLA Features

  • 128Mbit Parallel NOR Flash memory.
  • Supply voltage from 2.7V to 3.6V.
  • Fast access time of 70ns.
  • 56-TSOP surface mount package.
  • Wide operating temperature range.

JS28F128M29EWLA Applications

  • Embedded system storage.
  • Firmware storage.
  • Data logging applications.
  • Industrial control systems.

JS28F128M29EWLA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the supply voltage for the JS28F128M29EWLA?

The supply voltage (VCC) for program, erase, and read operations is 2.7V to 3.6V, and the I/O buffer voltage (VCCQ) is 1.65V to 3.6V.

What is the access time of the JS28F128M29EWLA?

The random access time is 60ns for BGA packages and 70ns for TSOP packages, while the page access time is 25ns.

What is the operating temperature range for this flash memory?

The operating ambient temperature range is -40°C to 85°C.

What package type is the JS28F128M29EWLA available in?

This part is available in a 56-TSOP (Thin Small Outline Package) for surface mounting.

What is the memory organization of the JS28F128M29EWLA?

The memory organization is 16M x 8 or 8M x 16.

How many erase cycles can each block withstand?

Each block can withstand a minimum of 100,000 erase cycles.

What is the data retention period for this flash memory?

The typical data retention period is 20 years.

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