| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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175 pcs
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175 pcs | On Request | 1 | On Request | On Request | 18+22+ | On Request | On Request |
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The Micron JS28F128J3F75A is a high-performance Parallel NOR Flash Memory device with a density of 128 Mbit. It utilizes 65 nm Flash Technology and offers an initial access speed of 75ns, with faster 25ns page-mode reads.
Designed for embedded applications, this memory features a symmetrical 128-KB block architecture. It supports a system voltage range of 2.7V to 3.6V for both VCC and VCCQ. The device includes enhanced security options for code protection, individual block locking, and a password access feature.
Available in both 56-Lead TSOP and 64-Ball Easy BGA packages, the JS28F128J3F75A is suitable for various board-level integrations. It also offers a 100K minimum erase cycles per block for reliability and is compliant with JESD47E standards.
The device operates from 2.7 V to 3.6 V.
The operating temperature range is -40 °C to +85 °C.
The device is available in 56-Lead TSOP and 64-Ball Easy BGA packages.
The memory density is 128 Mbit organized into symmetrical 128-KB blocks.
Initial access time is 75 ns, with 25 ns asynchronous page-mode reads.
It supports 100K erase cycles per block.
Enhanced security includes individual block locking, absolute protection with VPEN = Vss, password access, and a One-Time Programmable register with 64 customer-programmable OTP bits.