| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The Micron Technology JR28F064M29EWLA is a high-performance 64Mbit embedded parallel NOR flash memory device. Designed for demanding applications, it offers a fast 70ns random access time and a page access time of 25ns, enabling efficient data retrieval.
This flash memory operates with a supply voltage ranging from 2.7V to 3.6V, making it suitable for various system designs. The memory is organized as 8M x 8 or 4M x 16 bits, providing flexibility for different data storage needs. It supports asynchronous random or page read operations and features embedded program/erase algorithms.
The JR28F064M29EWLA is housed in a 48-TSOP I surface-mount package, facilitating integration into printed circuit boards. It is rated for an operating temperature range of -40°C to +85°C (TA), ensuring reliable performance in diverse environmental conditions. The device also boasts high endurance with 100,000 minimum erase cycles per block and 20 years of data retention.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage is 2.7V to 3.6V and the I/O buffer voltage is 1.65V to 3.6V.
It is available in a 48-TSOP I package (also 48-TFSOP).
-40°C to +85°C.
Yes, it is halogen-free.
64Mbit, organized as 8M x 8 or 4M x 16.
Typical random access time is 70 ns, page access time is 25 ns.
Minimum 100,000 erase cycles per block and 20-year data retention.