JR28F064M29EWBA The Micron Technology JR28F064M29EWBA is a 64Mbit Parallel NOR Flash Memory. It operates with a supply voltage of 2.7V to 3.6V and features a 70ns random access time.
Mfr Part #:

JR28F064M29EWBA

Available from 1 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology JR28F064M29EWBA is a 64Mbit Parallel NOR Flash Memory. It operates with a supply voltage of 2.7V to 3.6V and features a 70ns random access time.
✓ Total Stock: 1,500 pcs
$ Price Range: $1.28

JR28F064M29EWBA Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,500 pcs
1500 pcs On Request 1 On Request On Request 19+ On Request On Request

JR28F064M29EWBA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Halogen Free
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time

JR28F064M29EWBA Description

Short technical summary and product information.

The Micron Technology JR28F064M29EWBA is a 64Mbit Parallel NOR Flash Memory designed for embedded applications. It operates within a supply voltage range of 2.7V to 3.6V, with I/O buffers supporting 1.65V to 3.6V.

 

Key electrical specifications include a typical random access time of 70ns for TSOP packages and 60ns for BGA packages. The memory supports asynchronous random or page reads with a page access time of 25ns. Program times are efficient, with 0.56µs per byte without VPPH and 0.31µs per byte with VPPH.

 

This NOR Flash memory features a memory organization of 8M x 8 or 4M x 16 and is housed in a 48-TSOP I package, suitable for surface mount applications. It offers robust features such as program/erase suspend and resume capabilities, block erase, chip erase, and software protection options including password access.

 

Environmental specifications include an operating temperature range of -40°C to +85°C and compliance with JESD47H standards, offering 100,000 minimum erase cycles per block and 20 years of data retention. The device is also halogen-free.

JR28F064M29EWBA Quick Information

Product Type: Flash Memory
Canonical Name: Micron Technology JR28F064M29EWBA Parallel NOR Flash Memory
Subcategory: NOR Flash

JR28F064M29EWBA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JR28F064M29EWBA Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

JR28F064M29EWBA Features

  • 64Mbit Parallel NOR Flash Memory.
  • Supply voltage 2.7V to 3.6V.
  • 70ns random access time.
  • 48-TSOP I surface mount package.
  • Operating temperature -40°C to +85°C.

JR28F064M29EWBA Applications

  • Embedded system storage.
  • Firmware storage.
  • Data logging applications.
  • Industrial control systems.

JR28F064M29EWBA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the JR28F064M29EWBA?

The supply voltage is 2.7V to 3.6V, and the I/O buffer voltage is 1.65V to 3.6V.

What package type is the JR28F064M29EWBA available in?

It is available in a 48-TSOP I (48-TFSOP) surface-mount package.

What is the operating temperature range?

The operating temperature range is -40°C to +85°C.

What is the memory size of the JR28F064M29EWBA?

The memory size is 64 Mbit.

What is the page access time?

The typical page access time is 25 ns.

How many erase cycles does the device support?

The device supports a minimum of 100,000 erase cycles per block.

Is the JR28F064M29EWBA halogen-free?

Yes, the device is halogen-free.

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