| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Halogen Free | |
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The Micron Technology JR28F064M29EWBA is a 64Mbit Parallel NOR Flash Memory designed for embedded applications. It operates within a supply voltage range of 2.7V to 3.6V, with I/O buffers supporting 1.65V to 3.6V.
Key electrical specifications include a typical random access time of 70ns for TSOP packages and 60ns for BGA packages. The memory supports asynchronous random or page reads with a page access time of 25ns. Program times are efficient, with 0.56µs per byte without VPPH and 0.31µs per byte with VPPH.
This NOR Flash memory features a memory organization of 8M x 8 or 4M x 16 and is housed in a 48-TSOP I package, suitable for surface mount applications. It offers robust features such as program/erase suspend and resume capabilities, block erase, chip erase, and software protection options including password access.
Environmental specifications include an operating temperature range of -40°C to +85°C and compliance with JESD47H standards, offering 100,000 minimum erase cycles per block and 20 years of data retention. The device is also halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage is 2.7V to 3.6V, and the I/O buffer voltage is 1.65V to 3.6V.
It is available in a 48-TSOP I (48-TFSOP) surface-mount package.
The operating temperature range is -40°C to +85°C.
The memory size is 64 Mbit.
The typical page access time is 25 ns.
The device supports a minimum of 100,000 erase cycles per block.
Yes, the device is halogen-free.