| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,844 pcs
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3844 pcs | On Request | 1 | On Request | On Request | / | On Request | On Request |
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The Toshiba JDV2S08S is a silicon epitaxial planar type diode designed for use as a Voltage Controlled Oscillator (VCO) in UHF band radio applications. This variable capacitance diode offers a typical capacitance of 18.3pF at 3V and a high capacitance ratio of 3.0 (typ.) for C1V, C4V.
Key electrical characteristics include a typical series resistance of 0.35Ω, a maximum reverse voltage rating of 10V, and a junction temperature of 150°C. The device is suitable for use in small-size tuners.
Maximum ratings include a reverse voltage of 10V, a junction temperature of 150°C, and a storage temperature range of -55 to 150°C. The component is designed for surface mounting within a small-size tuner application.
The typical capacitance of the JDV2S08S diode is 18.3pF at 3V.
The typical capacitance ratio (C1V, C4V) for the JDV2S08S is 3.0.
The typical series resistance (rs) of the JDV2S08S is 0.35Ω.
The maximum reverse voltage (VR) for the JDV2S08S is 10V.
The maximum junction temperature (Tj) for the JDV2S08S is 150°C.
The storage temperature range (Tstg) for the JDV2S08S is -55 to 150°C.