| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies JANTXV2N6851 is a high-reliability P-Channel Power MOSFET designed for demanding applications. It features a breakdown voltage of -200V and a low static drain-to-source on-resistance of 0.80 Ohms at a gate-to-source voltage of -10V and a drain current of -2.4A.
This HEXFET transistor utilizes advanced technology for efficient geometry and processing, offering advantages such as voltage control and fast switching. It is suitable for applications including switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.
The JANTXV2N6851 is hermetically sealed and rated for repetitive avalanche and dv/dt conditions. It comes in a TO-39 through-hole package, making it suitable for various mounting requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-200V
0.80 Ohm
-2V to -4V
TO-39
RoHS3 Compliant
1 Unlimited