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JANTXV2N6849 The Infineon JANTXV2N6849 is a P-channel HEXFET Power MOSFET with a breakdown voltage of -100V and a continuous drain current of -6.5A. It is housed in a TO-205AF/TO-39 package.
Mfr Part #:

JANTXV2N6849

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon JANTXV2N6849 is a P-channel HEXFET Power MOSFET with a breakdown voltage of -100V and a continuous drain current of -6.5A. It is housed in a TO-205AF/TO-39 package.
✓ Total Stock: 400 pcs
$ Price Range: $0.99

JANTXV2N6849 Available from 1 distributor

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✓ Non-Authorised
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400 pcs
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JANTXV2N6849 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
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AEC Qualified
Automotive Grade
Gate Charge
Industrial Grade
Medical Grade
Military Grade
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Tape & Reel
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JANTXV2N6849 Description

Short technical summary and product information.

The Infineon JANTXV2N6849 is a high-reliability P-channel HEXFET Power MOSFET designed for demanding applications. It features a breakdown voltage (BVDSS) of -100V and a continuous drain current (ID) of -6.5A, with a maximum on-resistance (RDS(on)) of 0.30 Ohms. The device is hermetically sealed and qualified to JANS screening flow according to MIL-PRF-19500 for space applications.

 

Utilizing HEXFET POWER MOSFET technology, this transistor offers efficient geometry and unique processing for low on-state resistance and high transconductance. It provides voltage control, fast switching, and temperature stability of electrical parameters. The JANTXV2N6849 is suitable for applications such as DC-DC converters and motor drives.

 

The MOSFET is packaged in a TO-205AF (TO-39) through-hole package, making it suitable for various mounting configurations. Its robust design and high-reliability screening make it a suitable choice for critical systems.

JANTXV2N6849 Quick Information

Product Type: Power MOSFET
Series: JANTXV2N6849
Canonical Name: Infineon JANTXV2N6849 P-channel Power MOSFET
Subcategory: P-channel

JANTXV2N6849 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTXV2N6849 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTXV2N6849 Features

  • P-channel HEXFET Power MOSFET technology.
  • Rated for -100V drain-source breakdown voltage.
  • Continuous drain current of -6.5A.
  • Maximum on-resistance of 0.30 Ohms.
  • Hermetically sealed for high reliability.

JANTXV2N6849 Applications

  • Suitable for DC-DC converters.
  • Ideal for motor drive applications.
  • Used in high energy pulse circuits.
  • Applicable for switching power supplies.
  • Well-suited for inverters and choppers.

JANTXV2N6849 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the JANTXV2N6849 MOSFET?

The drain-source breakdown voltage (BVDSS) of the JANTXV2N6849 is -100V.

What is the maximum continuous drain current for the JANTXV2N6849?

The maximum continuous drain current (ID) for the JANTXV2N6849 is -6.5A.

What is the on-resistance of the JANTXV2N6849 MOSFET?

The maximum on-resistance (RDS(on)) of the JANTXV2N6849 is 0.30 Ohms.

What package type is the JANTXV2N6849 MOSFET supplied in?

The JANTXV2N6849 MOSFET is supplied in a TO-205AF / TO-39 package.

What is the ESD rating for the JANTXV2N6849?

The ESD rating for the JANTXV2N6849 is Class 1C per MIL-STD-750, Method 1020.

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