M55342K06B34E0RS2
Vishay
The Vishay Dale M55342K06B34E0RS2 is a surface mount chip resistor. It features RoHS3 compliance and an MSL of 1.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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51 pcs
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51 pcs | On Request | 1 | On Request | On Request | 33 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade |
The Infineon Technologies JANTXV2N6804 is a high-reliability P-channel Power MOSFET designed for demanding applications. It utilizes HEXFET POWER MOSFET technology, offering low on-state resistance and high transconductance.
Key electrical specifications include a Drain-Source Breakdown Voltage (BVDSS) of -100V and a Continuous Drain Current (ID) of -11A. The maximum on-state resistance (RDS(on)) is 0.30 Ohms, and the maximum gate charge (QG) is 29nC. The device also features an ESD rating of Class 1C per MIL-STD-750, Method 1020.
This MOSFET is packaged in a hermetically sealed TO-3 (TO-204AA) through-hole package, suitable for various power management tasks. Its design is well-suited for applications such as DC-DC converters and motor drives, benefiting from voltage control, fast switching, and temperature stability.
The JANTXV2N6804 is qualified to the JANTX screening flow according to MIL-PRF-19500 for high-reliability applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (BVDSS) is -100V.
The maximum continuous drain current (ID) is -11A.
The maximum on-resistance (RDS(on)) is 0.30 Ohms.
The JANTXV2N6804 is available in a TO-3 (TO-204AA) through-hole package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.