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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The JANTXV2N6800U from Microsemi Corporation is an N-Channel MOSFET suitable for various electronic applications. This device features a high drain-source voltage rating of 400V and can handle a continuous drain current of up to 3A at 25°C.
Key electrical characteristics include a maximum gate-source voltage of ±20V and a gate-source threshold voltage of 4V at 250µA. The static drain-source on-resistance is specified as a maximum of 1.1 Ohm at 3A and 10V gate drive. Power dissipation is rated at 800mW (Ta) and 25W (Tc).
This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in an 18-CLCC (formerly TO-39) surface-mount package, designed for efficient thermal management and integration into compact designs.
The JANTXV2N6800U is qualified per MIL-PRF-19500/557, indicating its suitability for high-reliability applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 400 Vdc.
The continuous drain current is 3A at 25°C and 2A at 100°C.
The gate-source threshold voltage is 4V at 250µA.
The operating temperature range is -55°C to 150°C.
The JANTXV2N6800U is available in an 18-CLCC (formerly TO-39) surface mount package.