SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 91 | On Request | On Request |
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The Infineon Technologies JANTXV2N6796 is a high-reliability N-Channel Power MOSFET designed for demanding applications. It features a breakdown voltage of 100V and a low on-resistance of 0.18 Ohms at a continuous drain current of 8.0A.
This HEXFET transistor offers advantages such as voltage control, fast switching, and temperature stability. Key electrical characteristics include a gate threshold voltage between 2.0V and 4.0V, and a continuous drain current of 5.0A at 100°C case temperature. The device also boasts repetitive avalanche ratings and dynamic dv/dt rating capabilities.
Packaged in a hermetically sealed TO-39 (TO-205AF) through-hole package, the JANTXV2N6796 is suitable for various applications including switching power supplies, motor controls, inverters, and high energy pulse circuits. Its operating junction and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Breakdown Voltage (BVDSS) is 100V.
The typical Static Drain-to-Source On-Resistance (RDS(on)) is 0.18 Ohms at VGS = 10V and ID = 8.0A.
The operating junction and storage temperature range is -55°C to +150°C.
The JANTXV2N6796 is supplied in a TO-39 (TO-205AF) through-hole package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
