| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,512 pcs
|
4512 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The JANTXV2N6788 from Microsemi Corporation is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current of 6A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 350mOhm at 6A and 10V, a gate charge (Qg) of 18nC at 10V, and a gate-to-source threshold voltage (Vgs(th)) of 4V at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 800mW (Tc).
This MOSFET is packaged in a TO-205AF Metal Can (TO-39) and utilizes through-hole mounting. The technology employed is MOSFET (Metal Oxide), with a maximum gate-to-source voltage (Vgs) of ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the JANTXV2N6788 is 100V.
The JANTXV2N6788 has a continuous drain current of 6A (Tc).
The JANTXV2N6788 is supplied in a TO-205AF Metal Can package.
The JANTXV2N6788 is designed for through-hole mounting.
The operating temperature range for the JANTXV2N6788 is -55°C to 150°C (TJ).