| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Microsemi Corporation, part number JANTXV2N6784, is designed for various electronic applications requiring robust switching capabilities. It features a maximum drain-to-source voltage (Vdss) of 200V and can handle a continuous current of 2.25A at the case temperature.
The MOSFET has a low on-resistance of 1.6 Ohms maximum at 2.25A and 10V gate drive voltage. Its gate charge (Qg) is 8.6 nC maximum at 10V, and the gate threshold voltage (Vgs(th)) is 4V maximum at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a TO-205AF Metal Can, this component is suitable for through-hole mounting. It offers a power dissipation of 800mW when mounted on a PCB (Ta) and up to 15W when mounted on the case (Tc). The JANTXV2N6784 utilizes Metal Oxide technology and has a maximum gate-source voltage rating of ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 200V.
The continuous current rating is 2.25A at the case temperature.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a TO-205AF Metal Can package.
This component is designed for through-hole mounting.