| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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280 pcs
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280 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTXV2N6301 from Microchip Technology is a PNP Darlington bipolar junction transistor (BJT) designed for robust performance in power switching and amplification circuits. This component offers a high collector-emitter breakdown voltage of 80V and can handle a maximum continuous collector current of 8A, making it suitable for applications requiring significant current handling capabilities.
The transistor is housed in a TO-66 package, a through-hole form factor that facilitates easy integration into printed circuit boards. Its Darlington configuration provides high current gain, simplifying driver circuitry in many designs. With a maximum power dissipation of 75W, it is engineered for demanding operational environments.
This component is categorized under single bipolar transistors, specifically within the PNP type, and is part of the broader discrete semiconductor products family. Its specifications make it a reliable choice for power supply circuits, motor control, and other high-power switching applications where efficiency and robust performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is a PNP Darlington transistor.
The maximum collector current is 8A.
The collector-emitter breakdown voltage is 80V.
The Vce saturation is 3V at a base current of 80mA and collector current of 8A.
The maximum power dissipation is 75W.
The package is TO-66.
It is a through-hole mount transistor.