| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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170 pcs
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170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTXV2N6052 from Microchip Technology is a PNP Darlington bipolar junction transistor (BJT) designed for robust performance in demanding applications. It offers a high collector-emitter voltage rating of 100V and can handle a continuous collector current of 12A, with a power dissipation capability of 150W. This transistor features a high DC current gain (hFE) of 1000 at 6A and 3V, and a Vce saturation of 3V at 120mA and 12A.
Packaged in the traditional TO-3 (TO-204AA) metal can, the JANTXV2N6052 is designed for through-hole mounting, facilitating integration into various circuit designs. Its operating temperature range spans from -55°C to 175°C (TJ), ensuring reliability across a wide thermal spectrum. The RoHS 3 compliant status indicates adherence to certain environmental regulations, though specific verification is recommended.
This component is suitable for power switching and amplification circuits where high current gain and voltage handling are critical. Its robust construction and thermal capabilities make it a reliable choice for industrial and high-power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 100V.
The continuous collector current is 12A.
The power dissipation is 150W.
The DC current gain (hFE) is a minimum of 1000 at 6A and 3V.
The operating temperature range is -55°C to 175°C (TJ).
The JANTXV2N6052 is supplied in a TO-3 (TO-204AA) package.
The JANTXV2N6052 is mounted using the through-hole method.