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JANTXV2N5682 The Microsemi Corporation JANTXV2N5682 is an NPN transistor designed for various electronic applications. It offers a 120V collector-emitter breakdown voltage and a 1A maximum collector current.
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JANTXV2N5682

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The Microsemi Corporation JANTXV2N5682 is an NPN transistor designed for various electronic applications. It offers a 120V collector-emitter breakdown voltage and a 1A maximum collector current.
✓ Total Stock: 90 pcs
$ Price Range: $0.99

JANTXV2N5682 Available from 1 distributor

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✓ Non-Authorised
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90 pcs
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JANTXV2N5682 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation
Tape & Reel
Transistor Type
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JANTXV2N5682 Description

Short technical summary and product information.

The Microsemi Corporation JANTXV2N5682 is a single NPN bipolar junction transistor (BJT). It is designed for applications requiring a robust and reliable switching or amplification component.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 120V and a maximum collector current of 1A. The transistor exhibits a Vce saturation of 1V at 50mA/500mA and a minimum DC current gain (hFE) of 40 at 250mA/2V. The collector cutoff current is a maximum of 10μA.

 

This component operates within a wide temperature range, from -65°C to 200°C (TJ), making it suitable for demanding environments. It is qualified under MIL-PRF-19500/583, indicating its suitability for military and high-reliability applications.

 

The JANTXV2N5682 is supplied in a TO-39 (TO-205AD) metal can package and is designed for through-hole mounting. The bulk packaging is suitable for industrial and high-volume manufacturing processes.

JANTXV2N5682 Quick Information

Product Type: NPN Transistor
Series: JANTXV
Canonical Name: Microsemi Corporation JANTXV2N5682 NPN Transistor
Subcategory: Bipolar (BJT) - Single

JANTXV2N5682 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTXV2N5682 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTXV2N5682 Features

  • NPN bipolar junction transistor.
  • 120V collector-emitter breakdown voltage.
  • 1A maximum collector current.
  • Wide -65°C to 200°C operating temperature.
  • Military qualified under MIL-PRF-19500/583.

JANTXV2N5682 Applications

  • Used in military-grade avionics systems.
  • Suitable for high-voltage switching up to 120V.
  • Ideal for medium-power general purpose amplification.
  • Common in ruggedized industrial control circuits.
  • Applicable in power management and driver stages.

JANTXV2N5682 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector current of the JANTXV2N5682?

The maximum collector current is 1A.

What is the collector-emitter breakdown voltage of the JANTXV2N5682?

The maximum collector-emitter breakdown voltage is 120V.

What is the operating temperature range of the JANTXV2N5682?

The operating junction temperature range is -65°C to 200°C.

What package type is the JANTXV2N5682 available in?

The JANTXV2N5682 is available in a TO-205AD (TO-39-3 Metal Can) package for through-hole mounting.

What is the power dissipation rating of the JANTXV2N5682?

The maximum power dissipation is 1W.

What is the minimum DC current gain (hFE) of the JANTXV2N5682?

The minimum DC current gain is 40 at 250mA collector current and 2V collector-emitter voltage.

Is the JANTXV2N5682 qualified to a military specification?

Yes, the JANTXV2N5682 is qualified to MIL-PRF-19500/583.

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