| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The JANTXV2N5680 is a PNP Power Silicon Transistor manufactured by MACOM Technology Solutions. It is designed for applications requiring a 120V collector-emitter voltage and a continuous collector current of 1A.
Key electrical characteristics include a maximum power dissipation of 1W at 25°C ambient temperature, and up to 10W at 100°C case temperature. The operating and storage temperature range is -65°C to +200°C. The transistor features a minimum DC current gain (hFE) of 40 at 250mA and 2V, with a collector-emitter saturation voltage of 0.6V maximum at 250mA and 25mA.
This component is housed in a TO-39 (TO-205AD) metal can package and is designed for through-hole mounting. Its robust construction and wide operating temperature range make it suitable for demanding environments. The JANTXV2N5680 is available in JAN, JANTX, and JANTXV specifications per MIL-PRF-19500/582.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the JANTXV2N5680 is 120 Vdc.
The JANTXV2N5680 has a continuous collector current rating of 1.0 Adc.
The operating and storage temperature range for this transistor is -65°C to +200°C.
The JANTXV2N5680 is available in a TO-39 (TO-205AD) package.
The minimum DC current gain (hFE) at 250mA and 2V is 40.
The collector-emitter saturation voltage (Vce(sat)) at 50mA and 500mA is a maximum of 1.0 Vdc.