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JANTXV2N5666 The JANTXV2N5666 is an NPN power silicon switching transistor from Microchip Technology. It features a 200V collector-emitter voltage and a 5A collector current.
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JANTXV2N5666

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Mfr Name: Microchip Technology
Microchip Technology
The JANTXV2N5666 is an NPN power silicon switching transistor from Microchip Technology. It features a 200V collector-emitter voltage and a 5A collector current.
✓ Total Stock: 2 pcs
$ Price Range: $0.99

JANTXV2N5666 Available from 1 distributor

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JANTXV2N5666 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Spacing
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Turn On Time
Vce Saturation (Max) @ Ib, Ic
Voltage
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JANTXV2N5666 Description

Short technical summary and product information.

The JANTXV2N5666 is an NPN power silicon switching transistor manufactured by Microchip Technology. It is qualified per MIL-PRF-19500/455 and designed for high-performance switching applications.

 

This transistor offers a collector-emitter voltage of up to 200V and a continuous collector current of 5A. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 1A and 5V, and a collector-emitter saturation voltage (VCE(sat)) of 1V at 5A collector current and 1A base current. The operating and storage junction temperature range is -65°C to +200°C.

 

Packaged in a TO-5 metal can (TO-205AA), the JANTXV2N5666 is suitable for through-hole mounting. Its robust construction and specified performance make it a reliable choice for various power control and switching circuits where high voltage and current handling are required.

JANTXV2N5666 Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: JANTXV2N5666 NPN Power Silicon Switching Transistor
Subcategory: NPN

JANTXV2N5666 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTXV2N5666 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTXV2N5666 Features

  • NPN power silicon switching transistor.
  • 200V collector-emitter voltage rating.
  • 5A continuous collector current.
  • TO-5 metal can package.
  • Qualified per MIL-PRF-19500/455.

JANTXV2N5666 Applications

  • Power switching applications.
  • High voltage circuits.
  • Current control systems.
  • General purpose amplification.

JANTXV2N5666 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the JANTXV2N5666?

The JANTXV2N5666 has a collector-emitter voltage rating of 200 Vdc.

What is the continuous collector current for this NPN transistor?

The JANTXV2N5666 can handle a continuous collector current of 5 Adc.

What is the operating temperature range of the JANTXV2N5666?

The operating and storage junction temperature range for this transistor is -65°C to +200°C.

What package type is the JANTXV2N5666 supplied in?

The JANTXV2N5666 is supplied in a TO-5 metal can package.

How is the JANTXV2N5666 mounted?

The JANTXV2N5666 is designed for through-hole mounting.

What is the minimum DC current gain (hFE) at 1A and 5V for the JANTXV2N5666?

The minimum DC current gain (hFE) at 1A and 5V for the JANTXV2N5666 is 40.

What is the collector-emitter saturation voltage at 5A collector current and 1A base current?

The collector-emitter saturation voltage at 5A collector current and 1A base current is 1 Vdc.

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