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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector (Ic) (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The JANTXV2N5302 from Microchip Technology is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This transistor offers a robust 60V collector-emitter breakdown voltage and can handle a maximum collector current of 30A, making it suitable for power switching and amplification circuits.
With a power dissipation rating of 5W, the JANTXV2N5302 is built to withstand significant thermal loads. It features a minimum DC current gain (hFE) of 15 at 15A and 2V, ensuring efficient amplification. The operating temperature range is -65°C to 200°C (TJ), providing reliability in extreme environments.
This component is housed in a TO-3 (TO-204AA) package, a standard for power transistors, and is designed for through-hole mounting. The JANTXV2N5302 series is specified under MIL-PRF-19500/456, indicating its suitability for military and high-reliability applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60V.
The collector current is rated at 30A.
It is packaged in a TO-3 case with through-hole mounting.
It operates from -65°C to 200°C.
Yes, it is RoHS3 compliant.