| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTXV2N4957 from Microsemi Corporation is a PNP bipolar junction transistor (BJT) specifically designed for RF applications. It features a maximum operating voltage of 30V and can handle a current of up to 30mA, with a power dissipation rating of 200mW. The transistor offers a DC current gain (hFE) of 30 at 5mA and 10V, and a typical noise figure of 3.5dB at 450MHz. Its gain is rated at 25dB. The operating temperature range is from -65°C to 200°C. This component is packaged in a TO-72-3 Metal Can and is designed for through-hole mounting.
This RF transistor is suitable for various high-frequency circuit designs where stable performance across a wide temperature range is required. Its specifications make it a viable option for signal amplification and processing in RF systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JANTXV2N4957 has an operating voltage of 30V.
The JANTXV2N4957 transistor has a current rating of 30mA.
The JANTXV2N4957 has a power dissipation of 200mW.
The JANTXV2N4957 operates within a temperature range of -65°C to 200°C.
The JANTXV2N4957 is supplied in a TO-72-3 Metal Can package.
The JANTXV2N4957 is designed for through-hole mounting.