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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Cutoff Current (Maximum @ VBE = 0.5 Vdc, VCE = 60 Vdc) | |
| Cutoff Current (Maximum @ VCB = 100 Vdc) | |
| Cutoff Current (Maximum @ VCE = 60 Vdc) | |
| Cutoff Current (Maximum @ VEB = 7.0 Vdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Delay Time | |
| Fall Time | |
| Magnitude of Common Emitter Small-Signal Short-Circuit Forward-Current Transfer Ratio | |
| Mounting Type | |
| Operating & Storage Temperature Range | |
| Operating Temperature | |
| Operating Voltage (Maximum) | |
| Operating and Storage Temperature Range | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum @ T_A = +25 °C) | |
| Rise Time | |
| Saturation Voltage (Maximum @ IC = 10.0 Adc, IB = 1.0 Adc) | |
| Saturation Voltage (Maximum @ IC = 5.0 Adc, IB = 0.5 Adc) | |
| Storage Time | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ Ic=5 A, Vce=5 V) | |
| hfe (Minimum/Maximum @ IC = 5.0 Adc, VCE = 5.0 Vdc) |
The JANTXV2N4150 is a high-performance NPN power silicon transistor manufactured by Microchip Technology. It is designed for demanding applications requiring robust performance, offering a maximum collector-emitter voltage of 70V and a continuous collector current capability of 10A.
This transistor features a TO-5 metal can package, suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 5A and 5V, and a maximum collector-emitter saturation voltage (VCE(sat)) of 2.5V at 10A and 1A base current. The operating temperature range spans from -65°C to +200°C, making it suitable for harsh environments.
With a total power dissipation of up to 160mW at 25°C ambient temperature, the JANTXV2N4150 is well-suited for power switching and amplification tasks. Its specifications also include dynamic characteristics such as a small-signal forward current transfer ratio (hfe) between 1.5 and 7.5 at 10 MHz, and switching times including a delay time of 50ns and a fall time of 500ns.
The JANTXV2N4150 is available in various military grades, including JAN, JANTX, JANTXV, JANS, and JANSR, meeting stringent reliability requirements per MIL-PRF-19500/394.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the JANTXV2N4150 is 70 Vdc.
The JANTXV2N4150 can handle a maximum continuous collector current (IC) of 10 Adc.
The operating and storage temperature range for this transistor is -65°C to +200°C.
The JANTXV2N4150 is supplied in a TO-5 package, also referred to as TO-205AA, TO-5-3 Metal Can.
The minimum DC current gain (hFE) at IC = 5A and VCE = 5V is 40.
The maximum collector-emitter saturation voltage (VCE(sat)) at IC = 10A and IB = 1.0A is 2.5 Vdc.