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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Emitter Saturation Voltage (Maximum @ IC = 10.0 Adc, IB = 1.0 Adc) | |
| Base Emitter Saturation Voltage (Maximum @ IC = 5.0 Adc, IB = 0.5 Adc) | |
| Collector Current | |
| Collector Emitter Cutoff Current (Maximum @ VBE = 0.5 Vdc, VCE = 60 Vdc) | |
| Collector Emitter Cutoff Current (Maximum @ VCE = 60 Vdc) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 10.0 Adc, IB = 1.0 Adc) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 5.0 Adc, IB = 0.5 Adc) | |
| Collector-Base Cutoff Current | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe (Minimum @ IC = 10.0 Adc, VCE = 5.0 Vdc) | |
| DC Current Gain Hfe (Minimum/Maximum @ IC = 1.0 Adc, VCE = 5.0 Vdc) | |
| DC Current Gain Hfe (Minimum/Maximum @ IC = 5.0 Adc, VCE = 5.0 Vdc) | |
| Delay Time | |
| Emitter-Base Cutoff Current | |
| Fall Time | |
| Magnitude of Common Emitter Small-Signal Short-Circuit Forward-Current Transfer Ratio | |
| Mounting Type | |
| Operating & Storage Temperature Range | |
| Operating Temperature | |
| Operating and Storage Temperature Range | |
| Output Capacitance | |
| Power | |
| Reverse Voltage Breakdown (Maximum) | |
| Rise Time | |
| Storage Time | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation (Maximum @ T A = +25 °C) | |
| Total Power Dissipation (Maximum @ Tc=25 °C) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JANTXV2N4150 is a bipolar junction transistor (BJT) manufactured by MACOM Technology Solutions. It is designed for high-voltage switching and amplification applications, with a collector-emitter voltage rating of 70V and a maximum collector current of 10A. The device features a TO-5 metal can package with through-hole mounting, suitable for various electronic circuit designs. Its electrical characteristics include a collector-emitter breakdown voltage of 70V, a maximum collector-emitter saturation voltage of 0.6V at 5A, and a DC current gain ranging from 50 to 200. The transistor operates within a temperature range from -65°C to 200°C and has thermal resistances of 10°C/W junction-to-case and 175°C/W junction-to-ambient. It is used in power switching, amplification, and high-voltage applications where reliable performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 70 Vdc.
It comes in a TO-5 metal can package.
-65°C to 200°C.