2N2907AJAN
Motorola Semicondutor
The 2N2907AJAN is a bipolar junction transistor from Motorola Semiconductor. It features RoHS3 compliance and an MSL rating of 1.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade |
The JANTXV2N3867 is a PNP Silicon Low Power Transistor manufactured by Microsemi Corporation. It is qualified per MIL-PRF-19500/350.
Key electrical specifications include a Collector-Emitter Voltage (V CEO) of up to 60V and a maximum Collector Current (I C) of 3A. The device operates over a wide temperature range from -65°C to +200°C.
Available in TO-5 and TO-39 packages, this transistor is suitable for various low-power applications requiring reliable performance.
Absolute Maximum Ratings include a Collector-Base Voltage (V CBO) of 60Vdc and an Emitter-Base Voltage (V EBO) of 4.0Vdc. The total power dissipation (P T) is rated at 1.0W at +25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (V CEO) for the JANTXV2N3867 is 60 Vdc.
The maximum Collector Current (I C) for the JANTXV2N3867 is 3 mAdc.
The JANTXV2N3867 has an operating and storage junction temperature range of -65°C to +200°C.
The JANTXV2N3867 is available in TO-5 and TO-39 package types.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.
