| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) |
The JANTXV2N3838 is a bipolar junction transistor (BJT) manufactured by Microchip Technology. This NPN transistor is designed for various electronic applications requiring reliable switching and amplification.
Key electrical specifications include a minimum emitter breakdown voltage of 40V and a maximum continuous collector current of 600mA. The DC current gain (hFE) is a minimum of 100 at 150mA and 10V. It has a maximum power dissipation of 350mW and a maximum forward voltage of 400mV at 15mA/150mA.
The operating temperature range for the JANTXV2N3838 is from -65°C to 200°C. It is housed in a 6-FlatPack package and is designed for surface mounting.
This component belongs to the Military series, conforming to MIL-PRF-19500/421 standards. It is suitable for applications requiring robust performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum emitter breakdown voltage is 40V.
The maximum continuous collector current is 600mA.
The minimum DC current gain is 100 at 150mA and 10V.
The operating temperature range is -65°C to 200°C.
The JANTXV2N3838 is available in a 6-FlatPack surface mount package.