2N2907AJAN
Motorola Semicondutor
The 2N2907AJAN is a bipolar junction transistor from Motorola Semiconductor. It features RoHS3 compliance and an MSL rating of 1.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| SVHC Present |
The JANTXV2N3811 from Microsemi is a PNP Silicon Dual Transistor designed for various electronic applications. This component features a robust construction and is qualified per MIL-PRF-19500/336.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 60 Vdc, a Collector-Base Voltage (VCBO) of 60 Vdc, and an Emitter-Base Voltage (VEBO) of 5.0 Vdc. The maximum Collector Current (IC) for one section is 50 mAdc.
With a total power dissipation (PT) of 350 mW at 25°C, the JANTXV2N3811 is suitable for applications requiring moderate power handling. The operating and storage junction temperature range is from -65°C to +200°C.
This transistor is housed in a TO-78 package, facilitating surface mounting or through-hole integration into circuit designs. Its dual transistor configuration allows for versatile use in amplification and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60 Vdc.
The maximum collector current is 50 mAdc per section.
TO-78 package.
-65 to +200 °C.
350 mW at TA = +25°C (both sections), derate 2.00 mW/°C above 25°C.
For 2N3811 variants: 75–225 at IC = 10Adc, VCE = 5.0Vdc; 250–900 at IC = 1.0Adc, VCE = 5.0Vdc.
VCE(sat) is 0.25 Vdc maximum and VBE(sat) is 0.8 Vdc maximum at the specified test conditions.
