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JANTXV2N3811 The JANTXV2N3811 is a dual PNP silicon transistor from Microsemi. It features a 60V collector-emitter voltage and 350mW power dissipation.
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JANTXV2N3811

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The JANTXV2N3811 is a dual PNP silicon transistor from Microsemi. It features a 60V collector-emitter voltage and 350mW power dissipation.
✓ Total Stock: 14 pcs
$ Price Range: $0.99

JANTXV2N3811 Available from 1 distributor

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14 pcs
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14 pcs On Request 1 On Request On Request 302 On Request On Request
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JANTXV2N3811 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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JANTXV2N3811 Description

Short technical summary and product information.

The Microsemi JANTXV2N3811 is a dual PNP bipolar junction transistor designed for various electronic applications. It offers a collector-emitter voltage of up to 60V and a maximum collector current of 50mA per section. The device has a total power dissipation of 350mW at +25°C ambient temperature.

 

This transistor is housed in a TO-78-6 metal can package and is designed for through-hole mounting. Its operating temperature range spans from -65°C to +200°C, making it suitable for demanding environments. Key electrical characteristics include a minimum DC current gain (hFE) of 75 at 1mA/5V and a collector-emitter saturation voltage of 250mV at 100mA/1mA.

 

The JANTXV2N3811 is qualified per MIL-PRF-19500/336, indicating its suitability for military and high-reliability applications. Its dual PNP configuration allows for versatile circuit designs.

JANTXV2N3811 Quick Information

Product Type: Dual PNP Transistor
Series: 2N3811
Canonical Name: JANTXV2N3811 PNP Silicon Dual Transistor
Subcategory: PNP Transistor

JANTXV2N3811 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTXV2N3811 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTXV2N3811 Features

  • Dual PNP silicon transistor.
  • 60V collector-emitter voltage rating.
  • 350mW total power dissipation.
  • TO-78-6 metal can package.
  • Qualified per MIL-PRF-19500/336.

JANTXV2N3811 Applications

  • Suitable for high-reliability circuits.
  • Used in military applications.
  • General purpose amplification.
  • Switching applications.

JANTXV2N3811 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the JANTXV2N3811?

The maximum collector-emitter voltage for the JANTXV2N3811 is 60 Vdc.

What is the operating temperature range of the JANTXV2N3811 transistor?

The JANTXV2N3811 transistor operates between -65°C and +200°C.

What package type is the JANTXV2N3811 supplied in?

The JANTXV2N3811 is supplied in a TO-78-6 Metal Can package.

How is the JANTXV2N3811 mounted?

The JANTXV2N3811 is designed for through-hole mounting.

What is the power dissipation of the JANTXV2N3811?

The JANTXV2N3811 has a total power dissipation of 350mW at +25°C.

What is the minimum DC current gain (hFE) for the JANTXV2N3811?

The minimum DC current gain (hFE) for the JANTXV2N3811 is 75 at 1mA collector current and 5V collector-emitter voltage.

What is the collector-emitter saturation voltage of the JANTXV2N3811?

The collector-emitter saturation voltage for the JANTXV2N3811 is a maximum of 250mV at 100mA collector current and 10mA base current.

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