| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,661 pcs
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2661 pcs | On Request | 1 | On Request | On Request | 1629+ | On Request | On Request |
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The JANTXV2N3810 is a dual PNP bipolar transistor manufactured by Microchip Technology. This component is designed for various electronic applications requiring PNP amplification. It features a collector-emitter breakdown voltage of up to 60V and a maximum collector current of 50mA.
The transistor exhibits a Vce saturation voltage of 250mV at 100µA base current and 1mA collector current, with a minimum DC current gain (hFE) of 150. The collector cutoff current is a maximum of 10µA (ICBO).
Packaged in a TO-78-6 metal can with a through-hole mounting type, the JANTXV2N3810 is suitable for applications where robust packaging and reliable performance are essential. Its dual PNP configuration allows for versatile circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the JANTXV2N3810 is 60V.
The maximum collector current for the JANTXV2N3810 is 50mA.
The Vce saturation voltage is 250mV at 100µA Ib and 1mA Ic.
The minimum DC current gain (hFE) is 150.
The JANTXV2N3810 is in a TO-78-6 package.
The JANTXV2N3810 is a through-hole mounted component.