| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
80 pcs
|
80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Supplier Device Package | |
| Transistor Type |
The JANTXV2N3737UB is a military-grade NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for applications requiring a breakdown voltage of up to 40V and can handle a maximum collector current of 1.5A. The transistor has a maximum power dissipation of 500mW and a DC current gain (hFE) of at least 20 at 1A collector current and 1.5V.
This component operates within a wide temperature range of -65°C to 200°C. It is qualified under MIL-PRF-19500/395 standards, indicating its suitability for demanding environments. The JANTXV2N3737UB is provided in a 3-SMD, No Lead surface mount package, facilitating integration into compact electronic assemblies.
Key electrical characteristics include a Vce saturation of 900mV at 100mA collector current and a collector cutoff current of 10µA. The transistor's military grade and qualification underscore its reliability for critical applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3-SMD, No Lead (UB supplier device package).
-65°C to 200°C (junction temperature).
NPN bipolar junction transistor.
1.5 A.
40 V.
20 at 1A collector current and 1.5V VCE.
Surface mount.